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Plasma Sources for Thin Film Silicon Deposition 
Phive designs and manufacturers a series of plasma sources for incorporation into PECVD Deposition Equipment for the manufacture of thin film silicon photovoltaic products

PVRSD001 Gen 5

Plasma Source for Thin Film PV Module Manufacture

 

PVRSD002 Gen 3.5

Plasma Source for Thin Film PV Module Manufacture

 

 

Source Dimensions (external): 1470x1470x250mm

Source Dimensions (internal): 1360x1360x27mm

Plasma Facing Material: Al, Al2O3

RF Frequency: 60-150Mhz

Process Pressure: 1mbar to 10mbar

Max Operational Temperature: 500C

Process Gases: H2, Si H4, SF6, CF4, NH3, O2

Process Gas Flow Rate: 0-5slm

Max RF Process Power: 7kW

Power Supply: 3 phase 208 V/ 3phase 380V

Predicted Si Deposition rate: 10-30Å/s

Predicted Uniformity: 5%

 

 

 

 

 

 

 

Source Dimensions (external): 876x842x195mm

Source Dimensions (internal): 785x675x27mm

Plasma Facing Material: Al, Al2O3

RF Frequency: 60-150Mhz

Process Pressure: 1mbar to 10mbar

Max Operational Temperature: 500C

Process Gases: H2, Si H4, SF6, CF4, NH3, O2

Process Gas Flow Rate: 0-5slm

Max RF Process Power: 3.5kW

Power Supply: 3 phase 208 V/ 3phase 380V

Predicted Si Deposition rate: 10-30Å/s

Predicted Uniformity: 5%