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Increased Silicon Depoistion with higher RF

 

It has been demonstrated that by increasing electrical frequency you can greatly increase silicon deposition rate for thin film photovoltaics.

 

The standard deployed RF frequencies are between 13.56 and 80 MHz.

 

To date the industry has been limited to this frequency range due to wavelength effects that tie frequency to the plasma source size and thus the substrate area.

  

 

 

 

 

The incumbent technology has substrate size limits tied to RF 

 

With the incumbent technology, the deposition substrate and thus the solar panel area is also coupled to electrical frequency.

 

A doubling to frequency leads to a 10 times reduction in solar panel area and this negates all the benefits of increasing deposition rates using frequency

 
 
Phive's Technology

 

Phive has developed a patented segmented electrode and power splitting technology that can achieve stable VHF and UHF power distribution over very large areas.

 

The Phive plasma source has run at frequencies up to 400MHz and has demonstrated significantly faster silicon deposition rates.